Power-Switching Applications Beyond Silicon: The Status and Future Prospects of SiC and GaN Devices
Author(s)
Dimitrijev, S
Han, J
Haasmann, D
Moghadam, HA
Aminbeidokhti, A
Griffith University Author(s)
Year published
2014
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Following a review of the key power-switch requirements and the fundamental limitations of silicon as a material, this paper describes the technical issues and the reasons that motivated the development of commercially available Schottky diodes and MOSFETs in SiC. In the second part, the paper analyzes the potential of GaN to enable further technical progress beyond the theoretical limit of Si and even significant price reduction of power-electronic switches.Following a review of the key power-switch requirements and the fundamental limitations of silicon as a material, this paper describes the technical issues and the reasons that motivated the development of commercially available Schottky diodes and MOSFETs in SiC. In the second part, the paper analyzes the potential of GaN to enable further technical progress beyond the theoretical limit of Si and even significant price reduction of power-electronic switches.
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Conference Title
2014 29TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS PROCEEDINGS - MIEL 2014
Publisher URI
Subject
Microelectronics and Integrated Circuits