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  • Power-Switching Applications Beyond Silicon: The Status and Future Prospects of SiC and GaN Devices

    Author(s)
    Dimitrijev, S
    Han, J
    Haasmann, D
    Moghadam, HA
    Aminbeidokhti, A
    Griffith University Author(s)
    Dimitrijev, Sima
    Han, Jisheng
    Haasmann, Daniel E.
    Aminbeidokhti, Amirhossein
    Amini Moghadam, Hamid
    Year published
    2014
    Metadata
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    Abstract
    Following a review of the key power-switch requirements and the fundamental limitations of silicon as a material, this paper describes the technical issues and the reasons that motivated the development of commercially available Schottky diodes and MOSFETs in SiC. In the second part, the paper analyzes the potential of GaN to enable further technical progress beyond the theoretical limit of Si and even significant price reduction of power-electronic switches.Following a review of the key power-switch requirements and the fundamental limitations of silicon as a material, this paper describes the technical issues and the reasons that motivated the development of commercially available Schottky diodes and MOSFETs in SiC. In the second part, the paper analyzes the potential of GaN to enable further technical progress beyond the theoretical limit of Si and even significant price reduction of power-electronic switches.
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    Conference Title
    2014 29TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS PROCEEDINGS - MIEL 2014
    Publisher URI
    http://miel.elfak.ni.ac.rs/
    DOI
    https://doi.org/10.1109/MIEL.2014.6842083
    Subject
    Microelectronics and Integrated Circuits
    Publication URI
    http://hdl.handle.net/10072/66443
    Collection
    • Conference outputs

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