MOS Capacitor on 4H-SiC as a Nonvolatile Memory Element
Abstract
Nonvolatile memory characteristics of MOS capacitors are presented in this letter. The MOS capacitors have been fabricated on N-type 4H SiC substrate with nitrided oxide-semiconductor interface. The charge-retention time is in the order of 4.6ױ09 years, as determined by thermally activated (275-355é capacitance-transient measurements and extrapolation to room temperature. The estimated activation energy of the charge-generation processes is 1.6 eV. The results and the analysis presented in this letter demonstrate that 4H SiC MOS capacitors can be used as a memory element in nonvolatile RAMs
Journal Title
IEEE Electron Device Letters
Volume
23
Issue
7
Copyright Statement
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Subject
Electrical and Electronic Engineering