MOS Capacitor on 4H-SiC as a Nonvolatile Memory Element

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Author(s)
Cheong, KY
Dimitrijev, S
Griffith University Author(s)
Year published
2002
Metadata
Show full item recordAbstract
Nonvolatile memory characteristics of MOS capacitors are presented in this letter. The MOS capacitors have been fabricated on N-type 4H SiC substrate with nitrided oxide-semiconductor interface. The charge-retention time is in the order of 4.6ױ09 years, as determined by thermally activated (275-355é capacitance-transient measurements and extrapolation to room temperature. The estimated activation energy of the charge-generation processes is 1.6 eV. The results and the analysis presented in this letter demonstrate that 4H SiC MOS capacitors can be used as a memory element in nonvolatile RAMsNonvolatile memory characteristics of MOS capacitors are presented in this letter. The MOS capacitors have been fabricated on N-type 4H SiC substrate with nitrided oxide-semiconductor interface. The charge-retention time is in the order of 4.6ױ09 years, as determined by thermally activated (275-355é capacitance-transient measurements and extrapolation to room temperature. The estimated activation energy of the charge-generation processes is 1.6 eV. The results and the analysis presented in this letter demonstrate that 4H SiC MOS capacitors can be used as a memory element in nonvolatile RAMs
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Journal Title
IEEE Electron Device Letters
Volume
23
Issue
7
Copyright Statement
© 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Subject
Electrical and Electronic Engineering