Silicene transistors: silicon-based nanoelectronics from a single atom layer
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The discovery of graphene, a single-atom thin sheet of carbon, led to the worldwide race for the discovery of similar two-dimensional materials of other elements, especially of common semiconductor ma- terials such as silicon and germanium. Although graphene may be electrically the most conductive material, it is not suitable for making a transistor because of the lack of an energy band gap. In contrast, silicene and germanene, single-atom layers of silicon and germanium, pose a small band gap that can be used for making nanoelectronic transistors. A recent work has demonstrated the proof of concept of this transistor, which is made of a single layer of silicon atoms.
Micro and Nanosystems
© 2014 Bentham Science Publishers. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal website for access to the definitive, published version.
Microelectronics and Integrated Circuits