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dc.contributor.authorNguyen, Nam-Trung
dc.contributor.editorN. T. Nguyen
dc.date.accessioned2017-05-16T03:41:10Z
dc.date.available2017-05-16T03:41:10Z
dc.date.issued2014
dc.identifier.issn1876-4029en_US
dc.identifier.urihttp://hdl.handle.net/10072/66725
dc.description.abstractThe discovery of graphene, a single-atom thin sheet of carbon, led to the worldwide race for the discovery of similar two-dimensional materials of other elements, especially of common semiconductor ma- terials such as silicon and germanium. Although graphene may be electrically the most conductive material, it is not suitable for making a transistor because of the lack of an energy band gap. In contrast, silicene and germanene, single-atom layers of silicon and germanium, pose a small band gap that can be used for making nanoelectronic transistors. A recent work has demonstrated the proof of concept of this transistor, which is made of a single layer of silicon atoms.en_US
dc.description.publicationstatusYesen_US
dc.publisherBentham Scienceen_US
dc.publisher.placeUAEen_US
dc.publisher.urihttp://www.ingentaconnect.com/content/ben/mns/2014/00000006/00000004/art00001en_US
dc.relation.ispartofstudentpublicationNen_US
dc.relation.ispartofpagefrom205en_US
dc.relation.ispartofpageto206en_US
dc.relation.ispartofissue4en_US
dc.relation.ispartofjournalMicro and Nanosystemsen_US
dc.relation.ispartofvolume6en_US
dc.rights.retentionYen_US
dc.subject.fieldofresearchMicroelectronics and Integrated Circuitsen_US
dc.subject.fieldofresearchcode090604en_US
dc.titleSilicene transistors: silicon-based nanoelectronics from a single atom layeren_US
dc.typeJournal articleen_US
dc.type.descriptionLetter or Noteen_US
dc.type.codec3en_US
dc.description.versionPost-printen_US
gro.facultyFaculty of Science, Environment, Engineering and Technologyen_US
gro.rights.copyright© 2014 Bentham Science Publishers. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal website for access to the definitive, published version.en_US
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