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dc.contributor.authorNguyen, NT
dc.contributor.editorN. T. Nguyen
dc.date.accessioned2017-05-16T03:41:10Z
dc.date.available2017-05-16T03:41:10Z
dc.date.issued2014
dc.identifier.issn1876-4029
dc.identifier.urihttp://hdl.handle.net/10072/66725
dc.description.abstractThe discovery of graphene, a single-atom thin sheet of carbon, led to the worldwide race for the discovery of similar two-dimensional materials of other elements, especially of common semiconductor ma- terials such as silicon and germanium. Although graphene may be electrically the most conductive material, it is not suitable for making a transistor because of the lack of an energy band gap. In contrast, silicene and germanene, single-atom layers of silicon and germanium, pose a small band gap that can be used for making nanoelectronic transistors. A recent work has demonstrated the proof of concept of this transistor, which is made of a single layer of silicon atoms.
dc.description.publicationstatusYes
dc.publisherBentham Science
dc.publisher.placeUAE
dc.publisher.urihttp://www.ingentaconnect.com/content/ben/mns/2014/00000006/00000004/art00001
dc.relation.ispartofstudentpublicationN
dc.relation.ispartofpagefrom205
dc.relation.ispartofpageto206
dc.relation.ispartofissue4
dc.relation.ispartofjournalMicro and Nanosystems
dc.relation.ispartofvolume6
dc.rights.retentionY
dc.subject.fieldofresearchMicroelectronics and Integrated Circuits
dc.subject.fieldofresearchcode090604
dc.titleSilicene transistors: silicon-based nanoelectronics from a single atom layer
dc.typeJournal article
dc.type.descriptionC3 - Articles (Letter/ Note)
dc.type.codec3
dc.description.versionPost-print
gro.facultyFaculty of Science, Environment, Engineering and Technology
gro.rights.copyright© 2014 Bentham Science Publishers. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal website for access to the definitive, published version.
gro.hasfulltextFull Text
gro.griffith.authorNguyen, Nam-Trung


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