Enhanced photoelectroctatlytic performance of etched 3C–SiC thin film for water splitting under visible light

View/ Open
File version
Accepted Manuscript (AM)
Author(s)
Wang, Yazhou
Li, Sheng
Han, Jisheng
Wen, William
Wang, Hao
Dimitrijev, Sima
Zhang, Shanqing
Year published
2014
Metadata
Show full item recordAbstract
3C-SiC films have robust mechanical and physicochemical properties and a narrow band gap (2.36 eV). In this work, a robust p-type 3C-SiC thin film is grown on a large silicon substrate using a low temperature alternating supply epitaxy method. The film is heavily doped with Al in order to achieve high conductivity and allow photoelectrocatalytic splitting of water for hydrogen production under visible light. The as-grown thin film is further treated with a facile dry etching process in order to improve the surface area and induce a light trap structure. In comparison with the as-grown sample, the etched thin film possesses ...
View more >3C-SiC films have robust mechanical and physicochemical properties and a narrow band gap (2.36 eV). In this work, a robust p-type 3C-SiC thin film is grown on a large silicon substrate using a low temperature alternating supply epitaxy method. The film is heavily doped with Al in order to achieve high conductivity and allow photoelectrocatalytic splitting of water for hydrogen production under visible light. The as-grown thin film is further treated with a facile dry etching process in order to improve the surface area and induce a light trap structure. In comparison with the as-grown sample, the etched thin film possesses substantially improved photoelectrocatalytic performance due to increased light absorption, larger surface area and reduced recombination rate of photoelectron and holes.
View less >
View more >3C-SiC films have robust mechanical and physicochemical properties and a narrow band gap (2.36 eV). In this work, a robust p-type 3C-SiC thin film is grown on a large silicon substrate using a low temperature alternating supply epitaxy method. The film is heavily doped with Al in order to achieve high conductivity and allow photoelectrocatalytic splitting of water for hydrogen production under visible light. The as-grown thin film is further treated with a facile dry etching process in order to improve the surface area and induce a light trap structure. In comparison with the as-grown sample, the etched thin film possesses substantially improved photoelectrocatalytic performance due to increased light absorption, larger surface area and reduced recombination rate of photoelectron and holes.
View less >
Journal Title
RSC Advances
Volume
4
Copyright Statement
© 2014 Royal Society of Chemistry. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal website for access to the definitive, published version.
Subject
Chemical sciences
Solid state chemistry
Electrochemistry