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dc.contributor.authorTanner, P
dc.contributor.authorWang, L
dc.contributor.authorDimitrijev, S
dc.contributor.authorHan, J
dc.contributor.authorIacopi, A
dc.contributor.authorHold, L
dc.contributor.authorWalker, G
dc.date.accessioned2017-05-03T13:05:18Z
dc.date.available2017-05-03T13:05:18Z
dc.date.issued2014
dc.identifier.issn1947-2935
dc.identifier.doi10.1166/sam.2014.1813
dc.identifier.urihttp://hdl.handle.net/10072/68963
dc.description.abstractThin semiconductor films provide many functional uses in the fields of electronics, sensors, optics, and microelectro-mechanical systems (MEMS). A prime example is the case of thin film 3C-Silicon Carbide epitaxially grown on standard silicon wafers. The required SiC layer thickness for these applications ranges from a few nanometers to a few microns, and process conditions that control film stress, doping type and concentration, crystal orientation, and surface roughness need to be developed along with accurate physical and electrical characterization techniques. In this paper, we present two novel variations on established measurement techniques. Firstly, the hotprobe technique is used as a simple, non-destructive method to monitor film doping and crystal quality based on the open circuit voltage and short circuit currents. Results are presented for both n-type and p-type films grown on (100) and (111) silicon orientations, and supported by transmission electron micrographs and X-ray diffraction data. Secondly, a technique based on the four point resistivity measurement is used to determine film resistivity while eliminating the errors introduced by substrate leakage.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherAmerican Scientific Publishers
dc.publisher.placeUnited States
dc.relation.ispartofstudentpublicationN
dc.relation.ispartofpagefrom1542
dc.relation.ispartofpageto1547
dc.relation.ispartofissue7
dc.relation.ispartofjournalScience of Advanced Materials
dc.relation.ispartofvolume6
dc.rights.retentionY
dc.subject.fieldofresearchCondensed matter characterisation technique development
dc.subject.fieldofresearchPhysical chemistry
dc.subject.fieldofresearchMicroelectronics
dc.subject.fieldofresearchMaterials engineering
dc.subject.fieldofresearchNanotechnology
dc.subject.fieldofresearchcode510401
dc.subject.fieldofresearchcode3406
dc.subject.fieldofresearchcode400908
dc.subject.fieldofresearchcode4016
dc.subject.fieldofresearchcode4018
dc.titleNovel Electrical Characterization of Thin 3C-SiC Films on Si Substrates
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.rights.copyrightSelf-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the authors for more information.
gro.hasfulltextNo Full Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorTanner, Philip G.


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