The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films

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Author(s)
Hoang-Phuong, Phan
Dzung, Viet Dao
Wang, Li
Toan, Dinh
Nam-Trung, Nguyen
Qamar, Afzaal
Tanner, Philip
Dimitrijev, Sima
Zhu, Yong
Griffith University Author(s)
Year published
2015
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Abstract
This paper presents for the first time the effect of strain on the electrical conductance of p-type nanocrystalline SiC grown on a Si substrate. The gauge factor of the p-type nanocrystalline SiC was found to be 14.5 which is one order of magnitude larger than that in most metals. This result indicates that mechanical strain has a significant influence on the electrical conductance of p-type nanocrystalline SiC, which is promising for mechanical sensing applications in harsh environments.
Journal Title
Journal of Materials Chemistry C
Volume
3
DOI
Copyright Statement
© 2015 Royal Society of Chemistry. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal website for access to the definitive, published version.
Subject
Macromolecular and materials chemistry
Physical chemistry
Microelectronics
Materials engineering
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