• myGriffith
    • Staff portal
    • Contact Us⌄
      • Future student enquiries 1800 677 728
      • Current student enquiries 1800 154 055
      • International enquiries +61 7 3735 6425
      • General enquiries 07 3735 7111
      • Online enquiries
      • Staff phonebook
    View Item 
    •   Home
    • Griffith Research Online
    • Journal articles
    • View Item
    • Home
    • Griffith Research Online
    • Journal articles
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

  • All of Griffith Research Online
    • Communities & Collections
    • Authors
    • By Issue Date
    • Titles
  • This Collection
    • Authors
    • By Issue Date
    • Titles
  • Statistics

  • Most Popular Items
  • Statistics by Country
  • Most Popular Authors
  • Support

  • Contact us
  • FAQs
  • Admin login

  • Login
  • Si Surface Preparation for Heteroepitaxial Growth of SiC Using in situ Oxidation

    Thumbnail
    View/Open
    103747_1.pdf (274.1Kb)
    Author(s)
    Wang, L
    Dimitrijev, S
    Iacopi, A
    Hold, L
    Walker, G
    Chai, J
    Massoubre, D
    Griffith University Author(s)
    Dimitrijev, Sima
    Walker, Glenn M.
    Iacopi, Alan V.
    Wang, Li
    Hold, Leonie K.
    Massoubre, David
    Chai, Jessica
    Year published
    2015
    Metadata
    Show full item record
    Abstract
    To achieve high quality SiC growth on Si substrate, it is essential to get a smooth Si surface without forming SiC and graphitic islands during the surface cleaning and before the carbonisation process. In this paper, a novel in-situ surface cleaning method designed for the heteroepitaxial growth of SiC on Si substrate is developed using a custom-made low-pressure chemical vapour deposition reactor. The results indicate that the combination of ramping in oxygen and subsequent flowing of SiH4 avoids the contamination of Si, enables the oxide layer to be removed smoothly, and subsequently creates a smooth Si surface with regular ...
    View more >
    To achieve high quality SiC growth on Si substrate, it is essential to get a smooth Si surface without forming SiC and graphitic islands during the surface cleaning and before the carbonisation process. In this paper, a novel in-situ surface cleaning method designed for the heteroepitaxial growth of SiC on Si substrate is developed using a custom-made low-pressure chemical vapour deposition reactor. The results indicate that the combination of ramping in oxygen and subsequent flowing of SiH4 avoids the contamination of Si, enables the oxide layer to be removed smoothly, and subsequently creates a smooth Si surface with regular atomic steps. SiC grown on off-axis Si has better crystallinity and significantly smaller roughness than that grown on on-axis Si.
    View less >
    Journal Title
    Materials Science Forum
    Volume
    821-823
    DOI
    https://doi.org/10.4028/www.scientific.net/MSF.821-823.205
    Copyright Statement
    © 2015 Trans Tech Publications. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal's website for access to the definitive, published version.
    Subject
    Materials Engineering not elsewhere classified
    Technology not elsewhere classified
    Physical Chemistry (incl. Structural)
    Materials Engineering
    Publication URI
    http://hdl.handle.net/10072/69225
    Collection
    • Journal articles

    Footer

    Disclaimer

    • Privacy policy
    • Copyright matters
    • CRICOS Provider - 00233E

    Tagline

    • Gold Coast
    • Logan
    • Brisbane - Queensland, Australia
    First Peoples of Australia
    • Aboriginal
    • Torres Strait Islander