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dc.contributor.authorWang, L
dc.contributor.authorDimitrijev, S
dc.contributor.authorIacopi, A
dc.contributor.authorHold, L
dc.contributor.authorWalker, G
dc.contributor.authorChai, J
dc.contributor.authorMassoubre, D
dc.date.accessioned2017-05-03T15:02:37Z
dc.date.available2017-05-03T15:02:37Z
dc.date.issued2015
dc.identifier.issn0255-5476
dc.identifier.doi10.4028/www.scientific.net/MSF.821-823.205
dc.identifier.urihttp://hdl.handle.net/10072/69225
dc.description.abstractTo achieve high quality SiC growth on Si substrate, it is essential to get a smooth Si surface without forming SiC and graphitic islands during the surface cleaning and before the carbonisation process. In this paper, a novel in-situ surface cleaning method designed for the heteroepitaxial growth of SiC on Si substrate is developed using a custom-made low-pressure chemical vapour deposition reactor. The results indicate that the combination of ramping in oxygen and subsequent flowing of SiH4 avoids the contamination of Si, enables the oxide layer to be removed smoothly, and subsequently creates a smooth Si surface with regular atomic steps. SiC grown on off-axis Si has better crystallinity and significantly smaller roughness than that grown on on-axis Si.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.format.extent280754 bytes
dc.format.mimetypeapplication/pdf
dc.languageEnglish
dc.language.isoeng
dc.publisherScientific.Net
dc.publisher.placeSwitzerland
dc.relation.ispartofstudentpublicationN
dc.relation.ispartofpagefrom205
dc.relation.ispartofpageto208
dc.relation.ispartofjournalMaterials Science Forum
dc.relation.ispartofvolume821-823
dc.rights.retentionY
dc.subject.fieldofresearchMaterials Engineering not elsewhere classified
dc.subject.fieldofresearchTechnology not elsewhere classified
dc.subject.fieldofresearchPhysical Chemistry (incl. Structural)
dc.subject.fieldofresearchMaterials Engineering
dc.subject.fieldofresearchcode091299
dc.subject.fieldofresearchcode109999
dc.subject.fieldofresearchcode0306
dc.subject.fieldofresearchcode0912
dc.titleSi Surface Preparation for Heteroepitaxial Growth of SiC Using in situ Oxidation
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.rights.copyright© 2015 Trans Tech Publications. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal's website for access to the definitive, published version.
gro.hasfulltextFull Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorWalker, Glenn M.
gro.griffith.authorIacopi, Alan V.
gro.griffith.authorWang, Li
gro.griffith.authorHold, Leonie K.
gro.griffith.authorMassoubre, David
gro.griffith.authorChai, Jessica


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