Orientation dependence of the pseudo-Hall effect in p-type 3C–SiC four-terminal devices under mechanical stress
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This paper presents for the first time the orientation dependence of the pseudo-Hall effect in p-type 3C-SiC four-terminal devices under mechanical stress. Experimental results indicate that the offset voltage of p-type 3C-SiC four-terminal devices significantly depends on the directions of the applied current and stress. We also calculated the piezoresistive coefficients p61, p62, and p66, showing that p66 with its maximum value of approximately 16.7 נ10-11 Pa-1 plays a more dominant role than p61 and p62. The magnitude of the offset voltage in arbitrary orientation under stress was estimated based on these coefficients. The finding in this study plays an important role in the optimization of Microelectromechanical Systems (MEMS) mechanical sensors utilizing the pseudo-Hall effect in p-type 3C-SiC.
Copyright 2015 Royal Society of Chemistry. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal website for access to the definitive, published version.
Microelectronics and Integrated Circuits