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dc.contributor.authorIacopi, Francesca
dc.contributor.authorMishra, Neeraj
dc.contributor.authorCunning, Benjamin Vaughan
dc.contributor.authorGoding, Dayle
dc.contributor.authorDimitrijev, Sima
dc.contributor.authorBrock, Ryan
dc.contributor.authorDauskardt, Reinhold H
dc.contributor.authorWood, Barry
dc.contributor.authorBoeckl, John
dc.date.accessioned2018-09-05T06:40:46Z
dc.date.available2018-09-05T06:40:46Z
dc.date.issued2015
dc.identifier.issn0884-2914
dc.identifier.doi10.1557/jmr.2015.3
dc.identifier.urihttp://hdl.handle.net/10072/69321
dc.description.abstractWe introduce a novel approach to the synthesis of high-quality and highly uniform few-layer graphene on silicon wafers, based on solid source growth from epitaxial 3C-SiC films. Using a Ni/Cu catalytic alloy, we obtain a transfer-free bilayer graphene directly on Si(100) wafers, at temperatures potentially compatible with conventional semiconductor processing. The graphene covers uniformly a 2? silicon wafer, with a Raman ID/IG band ratio as low as 0.5, indicative of a low defectivity material. The sheet resistance of the graphene is as low as 25 O/square, and its adhesion energy to the underlying substrate is substantially higher than transferred graphene. This work opens the avenue for the true wafer-level fabrication of microdevices comprising graphene functional layers. Specifically, we suggest that exceptional conduction qualifies this graphene as a metal replacement for MEMS and advanced on-chip interconnects with ultimate scalability.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherCambridge University Press
dc.publisher.placeUnited States
dc.relation.ispartofstudentpublicationN
dc.relation.ispartofpagefrom609
dc.relation.ispartofpageto616
dc.relation.ispartofissue5
dc.relation.ispartofjournalJournal of Materials Research
dc.relation.ispartofvolume30
dc.rights.retentionY
dc.subject.fieldofresearchFunctional Materials
dc.subject.fieldofresearchCondensed Matter Physics
dc.subject.fieldofresearchMaterials Engineering
dc.subject.fieldofresearchMechanical Engineering
dc.subject.fieldofresearchcode091205
dc.subject.fieldofresearchcode0204
dc.subject.fieldofresearchcode0912
dc.subject.fieldofresearchcode0913
dc.titleA catalytic alloy approach for graphene on epitaxial SiC on silicon wafers
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
dc.description.versionAccepted Manuscript (AM)
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.rights.copyright© 2015 Cambridge University Press. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal's website for access to the definitive, published version.
gro.hasfulltextFull Text
gro.griffith.authorDimitrijev, Sima
gro.griffith.authorGoding, Dayle P.
gro.griffith.authorCunning, Ben V.
gro.griffith.authorIacopi, Francesca
gro.griffith.authorMishra, Neeraj


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