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dc.contributor.convenorMichael Galen_AU
dc.contributor.authorBaker, Marken_US
dc.contributor.authorPalmer, Adamen_US
dc.contributor.authorSang, Roberten_US
dc.contributor.editorMichael Galen_US
dc.date.accessioned2017-05-03T11:34:57Z
dc.date.available2017-05-03T11:34:57Z
dc.date.issued2002en_US
dc.date.modified2008-09-10T06:04:45Z
dc.identifier.doi10.1109/COMMAD.2002.1237227en_AU
dc.identifier.urihttp://hdl.handle.net/10072/8867
dc.description.abstractWe have used a metastable argon beam to expose gold-coated silicon substrates covered with a self assembled monolayer (SAM) resist. The substrates have been covered with a patterned mask, with feamres of 10 pm size, and exposed to the atomic beam. Subsequent etching revealed negative contrast patterns, consistent with the formation of a negative contamination resist in the SAM, which we attribute to background pump oil vapour. Metastable dosages of 9x10L4a toms cnY2 and exposure times < 1 hr have been sufficient to produce reliable negative resists.en_US
dc.description.peerreviewedYesen_US
dc.description.publicationstatusYesen_AU
dc.format.extent14357 bytes
dc.format.extent303183 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.languageEnglishen_US
dc.language.isoen_AU
dc.publisherInstitute of Electrical and Electronic Engineers, Inc.en_US
dc.publisher.placeNew Jerseyen_US
dc.publisher.urihttp://www.ieee.org/portal/siteen_AU
dc.relation.ispartofconferencename2002 Conference on Optoelectronic and Microelectronic Materials and Devicesen_US
dc.relation.ispartofconferencetitleCOMMAD 2002 PROCEEDINGSen_US
dc.relation.ispartofdatefrom2002-12-11en_US
dc.relation.ispartofdateto2002-12-13en_US
dc.relation.ispartoflocationSydneyen_US
dc.subject.fieldofresearchcode240301en_US
dc.titleContamination resists in metastable atom lithographyen_US
dc.typeConference outputen_US
dc.type.descriptionE1 - Conference Publications (HERDC)en_US
dc.type.codeE - Conference Publicationsen_US
gro.rights.copyrightCopyright 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_AU
gro.date.issued2002
gro.hasfulltextFull Text


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