Techniques for micromachining multilayered structures in silicon

The effects of wet anisotropic etching of [100] silicon were studied with mask edges aligned at 45/spl deg/ to the primary wafer. Samples were etched in aqueous KOH solution with the addition of isopropyl alcohol (IPA). The addition of IPA caused a change from the formation of vertical {100} walls to sloping {110} walls only for solutions below a critical concentration and temperature. The dependence on concentration was then applied to produce a new multilayer structure with {110} walls fabricated on top of {100} walls.The effects of wet anisotropic etching of [100] silicon were studied with mask edges aligned at 45/spl deg/ to the primary wafer. Samples were etched in aqueous KOH solution with the addition of isopropyl alcohol (IPA). The addition of IPA caused a change from the formation of vertical {100} walls to sloping {110} walls only for solutions below a critical concentration and temperature. The dependence on concentration was then applied to produce a new multilayer structure with {110} walls fabricated on top of {100} walls.
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Conference Title

Conference on Optoelectonic and Microelectronic materials and devices

DOI

https://doi.org/10.1109/COMMAD.2000.1022976

Copyright Statement

© 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Subject

History and Archaeology

Publication URI

http://hdl.handle.net/10072/9351

Collection

Conference outputs