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  • High Power and Reliable SPST/SP3T RF MEMS Switches for Wireless Applications

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    Accepted Manuscript (AM)
    Author(s)
    Pal, J
    Zhu, Y
    Lu, J
    Dao, D
    Khan, F
    Griffith University Author(s)
    Lu, Junwei
    Zhu, Yong
    Dao, Dzung V.
    Year published
    2016
    Metadata
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    Abstract
    This letter presents novel high power and reliable radio frequency (RF) microelectromechanical systems switches with single-pole single-throw (SPST) and single-pole triple-throw (SP3T) configurations. An in-plane movable structure with a single layer is made using a simple standard silicon-on-insulator process, which greatly reduces the micro-fabrication complexity and cost compared with the previously reported multi-contact switches with out-of-plane movable structures. The SPST switch achieves a uniform current distribution through each contact, thereby increasing the power handling capability of the switch. The SP3T switch ...
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    This letter presents novel high power and reliable radio frequency (RF) microelectromechanical systems switches with single-pole single-throw (SPST) and single-pole triple-throw (SP3T) configurations. An in-plane movable structure with a single layer is made using a simple standard silicon-on-insulator process, which greatly reduces the micro-fabrication complexity and cost compared with the previously reported multi-contact switches with out-of-plane movable structures. The SPST switch achieves a uniform current distribution through each contact, thereby increasing the power handling capability of the switch. The SP3T switch is a derivative of the SPST switch with separate individual actuations. The experimental results demonstrate that the fabricated switches have superior RF performances: insertion losses are -0.9 and -1.3 dB at 6 GHz for SPST and SP3T switches, respectively, whereas isolations are better than -29 and -37 dB from dc to 6 GHz for SPST and SP3T switches, respectively. In hot-switching conditions, the SPST switch can handle RF power up to 2 W for 10 million cycles, whereas the SP3T switch is capable of handling an RF power of 1 W for 7 million cycles before failure occurs.
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    Journal Title
    IEEE Electron Device Letters
    Volume
    37
    Issue
    9
    DOI
    https://doi.org/10.1109/LED.2016.2592539
    Copyright Statement
    © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
    Subject
    Electrical engineering
    Electronics, sensors and digital hardware
    Electrical energy generation (incl. renewables, excl. photovoltaics)
    Electrical energy transmission, networks and systems
    Microelectromechanical systems (MEMS)
    Publication URI
    http://hdl.handle.net/10072/99647
    Collection
    • Journal articles

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