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dc.contributor.authorPal, J
dc.contributor.authorZhu, Y
dc.contributor.authorLu, J
dc.contributor.authorDao, D
dc.contributor.authorKhan, F
dc.date.accessioned2019-04-16T03:36:37Z
dc.date.available2019-04-16T03:36:37Z
dc.date.issued2016
dc.identifier.issn0741-3106
dc.identifier.doi10.1109/LED.2016.2592539
dc.identifier.urihttp://hdl.handle.net/10072/99647
dc.description.abstractThis letter presents novel high power and reliable radio frequency (RF) microelectromechanical systems switches with single-pole single-throw (SPST) and single-pole triple-throw (SP3T) configurations. An in-plane movable structure with a single layer is made using a simple standard silicon-on-insulator process, which greatly reduces the micro-fabrication complexity and cost compared with the previously reported multi-contact switches with out-of-plane movable structures. The SPST switch achieves a uniform current distribution through each contact, thereby increasing the power handling capability of the switch. The SP3T switch is a derivative of the SPST switch with separate individual actuations. The experimental results demonstrate that the fabricated switches have superior RF performances: insertion losses are -0.9 and -1.3 dB at 6 GHz for SPST and SP3T switches, respectively, whereas isolations are better than -29 and -37 dB from dc to 6 GHz for SPST and SP3T switches, respectively. In hot-switching conditions, the SPST switch can handle RF power up to 2 W for 10 million cycles, whereas the SP3T switch is capable of handling an RF power of 1 W for 7 million cycles before failure occurs.
dc.description.peerreviewedYes
dc.languageEnglish
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.ispartofpagefrom1219
dc.relation.ispartofpageto1222
dc.relation.ispartofissue9
dc.relation.ispartofjournalIEEE Electron Device Letters
dc.relation.ispartofvolume37
dc.subject.fieldofresearchPower and Energy Systems Engineering (excl. Renewable Power)
dc.subject.fieldofresearchMicroelectromechanical Systems (MEMS)
dc.subject.fieldofresearchElectrical and Electronic Engineering
dc.subject.fieldofresearchcode090607
dc.subject.fieldofresearchcode091306
dc.subject.fieldofresearchcode0906
dc.titleHigh Power and Reliable SPST/SP3T RF MEMS Switches for Wireless Applications
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
dc.description.versionPost-print
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.rights.copyright© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
gro.hasfulltextFull Text
gro.griffith.authorLu, Junwei
gro.griffith.authorZhu, Yong
gro.griffith.authorPal, Jitendra
gro.griffith.authorKhan, Fahimullah
gro.griffith.authorDao, Dzung V.


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