We report on the temperature dependence of the charge transport and activation energy of amorphous silicon carbide (a-SiC) thin films grown on quartz by low-pressure chemical vapor deposition. The electrical conductivity as characterized by the Arrhenius rule was found to vary distinctly under two activation energy thresholds of 150 and 205 meV, corresponding to temperature ranges of 300 to 450 K and 450 to 580 K, respectively. The a-SiC/quartz system displayed a high temperature coefficient of resistance ranging from −4,000 to −16,000 ppm/K, demonstrating a strong feasibility of using this material for highly sensitive thermal sensing applications.