Atomic-layer soft plasma etching of MoS2

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Xiao, Shaoqing
Xiao, Peng
Zhang, Xuecheng
Yan, Dawei
Gu, Xiaofeng
Qin, Fang
Ni, Zhenhua
Han, Zhao Jun
Ostrikov, Kostya Ken
Griffith University Author(s)
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2016
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Abstract

Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes and may be applicable for a broader range of 2D materials and intended device applications.

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Scientific Reports

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6

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1

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© The Author(s) 2016. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

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Plasma physics; fusion plasmas; electrical discharges

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Multidisciplinary Sciences

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LARGE-AREA SYNTHESIS

MONOLAYER MOS2

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Xiao, S; Xiao, P; Zhang, X; Yan, D; Gu, X; Qin, F; Ni, Z; Han, ZJ; Ostrikov, KK, Atomic-layer soft plasma etching of MoS2, Scientific Reports, 2016, 6 (1)

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