RF sputtering of polycrystalline (100), (002), and (101) oriented AlN on an epitaxial 3C-SiC (100) on Si(100) substrate

No Thumbnail Available
File version
Author(s)
Iqbal, Abid
Chaik, Kien
Walker, Glen
Iacopi, Alan
Mohd-Yasin, Faisal
Dimitrijev, Sima
Griffith University Author(s)
Primary Supervisor
Other Supervisors
Editor(s)
Date
2014
Size
File type(s)
Location
License
Abstract

In this paper, the RF sputtering of polycrystalline AlN thin film on epitaxial 3C-SiC(100) on Si(100) substrate is presented. The effect of nitrogen concentration, deposition temperature and sputtering pressure are studied. These parameters are optimized to improve the crystal quality and deposition rate. Nitrogen concentration was varied from 40% to 100%, and it was found that the maximum deposition rate was observed at 40%. The RF bias power on substrate was also varied from 100 to 400 W, and it was observed that the deposition rate increases proportionally. The process temperature was varied from 200 to 400?àto see the effect on the crystal quality and deposition rate; it was found that temperature variation does not yield significant shifts. This paper is able to demonstrate a successful RF sputtering of a polycrystalline AlN (100), (101), and (002) on epitaxial 3C-SiC(100) using RF power supply of 550 W.

Journal Title
Journal of Vacuum Science and Technology B
Conference Title
Book Title
Edition
Volume
32
Issue
6
Thesis Type
Degree Program
School
Publisher link
Patent number
Funder(s)
Grant identifier(s)
Rights Statement
Rights Statement
Item Access Status
Note
Access the data
Related item(s)
Subject
Atmospheric sciences
Aerospace engineering
Materials engineering
Compound semiconductors
Microelectromechanical systems (MEMS)
Persistent link to this record
Citation
Collections