Effects of Processing Fluctuations on a 0.1µ MOSFET
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Dimitrijev, S
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IEEE Hong Kong Section & IEEE Asia-Pacific Region
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HONG KONG, HONG KONG
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Abstract
Fluctuations in the processing parameters can lead to a separation between the gate and the sourceldrain extensions in MOSFETs. A O.l堍OSFET was simulated with 5%, and 10% separation and it was found that the transconductance was reduced, the threshold voltage was not significantly changed, and that there was no effect on the breakdown because the device has suffered punchthrough rather than avalanche breakdown.
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1995 IEEE TENCON - ASIA-PACIFIC MICROELECTRONICS 2000, PROCEEDINGS
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© 1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
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Biological sciences