The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

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Hoang-Phuong, Phan
Dzung, Viet Dao
Nakamura, Koichi
Dimitrijev, Sima
Nam-Trung, Nguyen
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2015
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Abstract

Silicon carbide (SiC) is one of the most promising materials for applications in harsh environments thanks to its excellent electrical, mechanical, and chemical properties. The piezoresistive effect of SiC has recently attracted a great deal of interest for sensing devices in hostile conditions. This paper reviews the piezoresistive effect of SiC for mechanical sensors used at elevated temperatures. We present experimental results of the gauge factors obtained for various poly-types of SiC films and SiC nanowires, the related theoretical analysis, and an overview on the development of SiC piezoresistive transducers. The review also discusses the current issues and the potential applications of the piezoresistive effect in SiC.

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IEEE Journal of Microelectromechanical Systems

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24

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6

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© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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Manufacturing engineering

Mechanical engineering

Microelectromechanical systems (MEMS)

Electronics, sensors and digital hardware

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