Effect of substrate polishing on the growth of graphene on 3C–SiC(111)/Si(111) by high temperature annealing
File version
Accepted Manuscript (AM)
Author(s)
Bernardo, I Di
Mondelli, P
Pia, A Della
Betti, M G
Iacopi, Francesca
Mariani, C
Motta, Nunzio
Griffith University Author(s)
Primary Supervisor
Other Supervisors
Editor(s)
Date
Size
File type(s)
Location
License
Abstract
We analyse the effects of substrate polishing and of the epilayer thickness on the quality of graphene layers grown by high temperature annealing on 3C–SiC(111)/Si(111) by scanning tunnelling microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, low energy electron diffraction and high resolution angle resolved photoemission spectroscopy. The results provide a comprehensive set of data confirming the superior quality of the graphene layers obtained on polished substrates, and the limitations of the growth obtained on unpolished surfaces.
Journal Title
Nanotechnology
Conference Title
Book Title
Edition
Volume
27
Issue
18
Thesis Type
Degree Program
School
Publisher link
Patent number
Funder(s)
Grant identifier(s)
Rights Statement
Rights Statement
© 2016 Institute of Physics Publishing. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher.Please refer to the journal's website for access to the definitive, published version.
Item Access Status
Note
Access the data
Related item(s)
Subject
Nanotechnology not elsewhere classified