Graphene speeds up growth of strain-free aln film
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Abstract
以氮化物为代表的第三代半导体材料，在发光二极管1, 2、激光二极管3、紫外辐射源4、高频功率电子学5, 6等领域具有广阔的应用前景。目前，制备第三代半导体材料的常用方法是金属有机化学气相沉积(MOCVD)法，常用的衬底主要包括蓝宝石、硅、碳化硅等。但是，在材料异质外延过程中，衬底与半导体薄膜之间较大的晶格失配和热失配会导致材料中应力的积累以及缺陷密度的升高。除此之外，在材料岛状拼接生长过程中，在拼接界面处会引入大量的缺陷结构7。上述两类缺陷严重地降低了材料的质量，进而会影响器件的效率和可靠性。为了缓和晶格失配和热失配问题，通常需要在衬底和半导体薄膜之间生长一层缓冲层。合适的缓冲层材料能起到画龙点睛的作用。工业上常用的缓冲层是低温生长的多缺陷的氮化物。寻找合适的缓冲层材料和工艺是提升半导体薄膜质量的一个关键点。
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Wuli Huaxue Xuebao/ Acta Physico - Chimica Sinica
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35
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6
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© 2019 Chinese Chemical Society. The attached file is reproduced here in accordance with the copyright policy of the publisher. Please refer to the journal's website for access to the definitive, published version.
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Physical chemistry
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Tang, Z, Graphene speeds up growth of strain-free aln film, Wuli Huaxue Xuebao/ Acta Physico - Chimica Sinica, 2019, 35 (6), pp. 557-558