Consequences of NO thermal treatments in the properties of dielectric films / SiC structures

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Author(s)
Stedile, FC
Correa, SA
Radtke, C
Miotti, L
Baumvol, IJR
Soares, GV
Kong, F
Han, J
Hold, L
Dimitrijev, S
Griffith University Author(s)
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Bauer, AJ

Friedrichs, P

Krieger, M

Pensl, G

Rupp, R

Seyller, T

Date
2010
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Abstract

The consequences of thermal treatments in nitric oxide atmospheres on the characteristics of dielectric films / SiC structures was investigated by high-frequency capacitance-voltage measurements, X-ray photoelectron spectroscopy, and X-ray reflectometry techniques. It was observed that nitrogen incorporation in dielectric films / SiC structures leads to the formation of a thinner interfacial layer that contains carbon. This fact was related to the improvement of electrical properties of those structures.

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Materials Science Forum

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645-648

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Self-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the author[s] for more information.

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Physical chemistry

Microelectronics

Materials engineering

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