Development of CMOS UHF RFID modulator and demodulator using DTMOST techniques
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Author(s)
Mohd-Yasin, Faisal
Choong, Florence
Reaz, Mamun Ibne
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Tang, TA
Zeng, XY
Chen, Y
Yu, HH
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3228080 bytes
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Changsha, PEOPLES R CHINA
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Abstract
Dynamic Threshold MOSFET (DTMOST) circuits were explored for UHF RFID modulator and demodulator applications. Performance gain, power consumption, area penalty and design considerations associated with the DTMOST designs were compared and contrasted against the traditional cells. A lowered voltage supply headroom and higher speed performance using same energy per switching are observed by trading off minimum 20% more die area compared to the traditional circuits. This is due to the extra routing metals and individual well required for each DTMOST device.
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2009 IEEE 8TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS
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© 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
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Electrical and Electronic Engineering not elsewhere classified