Fabrication of SiC p-i-n betavoltaic cell with 63Ni irradiation source
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Author(s)
Shi, Yanqiang
Zhang, Yuming
Zhang, Yujuan
Han, Jisheng
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Jianguo Ma, Tianjin University
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Tianjin, PEOPLES R CHINA
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Abstract
A high open-circuit voltage betavoltaic cell based on a SiC pin homojunction is achieved. The open-circuit voltage (0.98V) and the power density (8.0nW/cm2) of the cell are the highest in the all reported SiC betavoltaic cells using 63Ni as irradiation source. The fill factor (FF) of the cell (74%) is the highest in all of the wide band gap semiconductor betavoltaic cells, including SiC and GaN.
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2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
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© 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
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Electrical and Electronic Engineering not elsewhere classified