Thickness dependence of the piezoresistive effect in p-type single crystalline 3C-SiC nano thin films
File version
Accepted Manuscript (AM)
Author(s)
Dzung, Viet Dao
Tanner, Philip
Han, Jisheng
Nam-Trung, Nguyen
Dimitrijev, Sima
Walker, Glenn
Wang, Li
Zhu, Yong
Griffith University Author(s)
Primary Supervisor
Other Supervisors
Editor(s)
Date
Size
File type(s)
Location
License
Abstract
This paper reports, for the first time, the piezoresistive effect of p-type single crystalline 3C-SiC nanothin films grown by LPCVD at low temperature. Compared to thick SiC films, the gauge factors of the 80 nm and 130 nm films decreased remarkably. This result indicates that the crystal defect at the SiC/Si interface has a significant influence on the piezoresistive effect of ultra-thin film p-type 3C-SiC.
Journal Title
Journal of Materials Chemistry C
Conference Title
Book Title
Edition
Volume
2
Issue
35
Thesis Type
Degree Program
School
Publisher link
Patent number
Funder(s)
Grant identifier(s)
Rights Statement
Rights Statement
© 2014 Royal Society of Chemistry. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher. Please refer to the journal website for access to the definitive, published version.
Item Access Status
Note
Access the data
Related item(s)
Subject
Macromolecular and materials chemistry
Physical chemistry
Materials engineering
Compound semiconductors