Using nonferromagnetic contact materials, Au(x nm)/Ge(y nm)/Pd(z nm) structures (where x, y, and z are the thicknesses of Au, Ge and Pd layers, respectively) are fabricated on Si-doped GaAs and studied as a function of x, y and z and n-type substrate doping density and annealing temperature to characterise them as ohmic contacts. The study shows that the structure with x=100, y = 40 and z = 10, annealed at 180 ?C for 1 h, contacts n-type GaAs more reliably with the low contact resistance. Using Rutherford backscattering spectrometry, contact formation mechanisms are also studied.