InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate

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Author(s)
Han, Jisheng
Dimitrjiev, Sima
Wang, Li
Iacopi, Alan
Qu, Shuang
Xu, Xiangang
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Monakhov, EV

Hornos, T

Svensson, BG

Date
2011
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Abstract

Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.

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Materials Science Forum

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679-680

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Self-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the author[s] for more information.

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Physical chemistry

Microelectronics

Materials engineering

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