This paper reports the mechanical analysis of bending test for Si and 3C-SiC materials. The analytical experimental were determined by using a standard three-point micro-bend test method (ASTM E290) to be applied on MEMS capacitive pressure sensor diaphragm. The MEMS device was fabricated into 5.0 mm x 5.0 mm square shape with the thicknesses of 680 μm and 1.0 μm thin film on 3C-SiC-on-Si wafer. The bending test is performed to determine the maximum stress during heat treatment up to 1000 °C and the load is applied until the 3C-SiC-on-Si wafer fracture. The test results indicated that 3C-SiC has good fatigue properties when heated up to 1000 °C with the maximum load of 52.72 N directly bring out the maximum stress and maximum strain of 104.95 MPa and 3.2%, respectively. This approach can be compared to Si, the material no longer withstand with the maximum load is 1.30 N only with the maximum stress is 10.13 MPa and maximum stain is 1.0%