Characteristics of small-signal capacitances of silicon-on-sapphire MOSFETs
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Yeow, Y.
Domyo, H.
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Abstract
The measured inter-electrode capacitances of silicon-on-sapphire (SOS) MOSFETs are presented and compared with simulation results. It is shown that the variations of capacitances with DC bias differ from those of bulk MOSFETs due to change in body potential variation of the SOS device resulting from electron-hole pair generation through impact ionisation.
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Electronics Letters
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39
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4
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Artificial Intelligence and Image Processing
Electrical and Electronic Engineering
Communications Technologies