Controlling the terminal layer atom of InTe for enhanced electrochemical oxygen evolution reaction and hydrogen evolution reaction performance
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Shao, Z
Zheng, B
Zhang, Y
Yao, X
Huang, K
Feng, S
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Herein, we report the method of molecular-beam-epitaxial growth (MBE) for precisely regulating the terminal surface with different exposed atoms on indium telluride (InTe) and studied the electrocatalytic performances toward hydrogen evolution reaction (HER) and oxygen evolution reaction (OER). The improved performances result from the exposed In or Te atoms cluster, which affects the conductivity and active sites. This work provides insights into the comprehensive electrochemical attributes of layered indium chalcogenides and exhibits a new route for catalyst synthesis.
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Nanoscale Advances
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5
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9
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© 2023 The Author(s). Published by the Royal Society of Chemistry. This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.
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Macromolecular and materials chemistry
Materials engineering
Nanotechnology
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Wu, J; Shao, Z; Zheng, B; Zhang, Y; Yao, X; Huang, K; Feng, S, Controlling the terminal layer atom of InTe for enhanced electrochemical oxygen evolution reaction and hydrogen evolution reaction performance, Nanoscale Advances, 2023, 5 (9), pp. 2418-2421