The transfer printing of 2 孭thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150?nm (ᱴ?nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 נ16 array format using a modified dip-pen nano-patterning system. Devices in the array were positioned using a pre-calculated set of coordinates to demonstrate an automated transfer printing process. Individual printed array elements showed blue emission centered at 486?nm with a forward-directed optical output power up to 80?嗠(355 mW/cm2) when operated at a current density of 20?A/cm2.