In this paper we suggest a new near ideal memory technology to replace existing FLASH and DRAM, the new technology being based on the semiconducting material Silicon Carbide (SiC). The technology will not only be a replacement for FLASH and DRAM but will open up new and novel applications because of its unique capabilities. We provide the reasons why SiC will become the next generation memory material and suggest new structures that will be exploited by a new company QsRAM that will lead the market push for these new memories.