High thermosensitivity of silicon nanowires induced by amorphization
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Hoang-Phuong, Phan
Kozeki, Takahiro
Qamar, Afzaal
Fujii, Tatsuya
Namazu, Takahiro
Nam-Trung, Nguyen
Dzung, Viet Dao
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Abstract
In this work, we demonstrate highly thermosensitive silicon nanowires (SiNWs) for thermal-sensing applications. Crystalline Si was amorphized by Focused Ion Beam in the fabrication process of the SiNWs, and subsequently recrystallized by a thermal annealing process to improve their electrical conductivity. A temperature coefficient of resistance (TCR) from −8000 ppm/K to −12,000 ppm/K was measured for the SiNWs. This large negative TCR is attributed to the boundary potential barrier of 110 meV between silicon crystallites in the poly crystalline SiNWs.
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Materials Letters
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177
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© 2016 Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International Licence (http://creativecommons.org/licenses/by-nc-nd/4.0/) which permits unrestricted, non-commercial use, distribution and reproduction in any medium, providing that the work is properly cited.
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Physical sciences
Chemical sciences
Engineering
Mechanical engineering not elsewhere classified