Semiconductor heterojunctions consist of two or more different semiconductor materials joined together to form a single junction, double junction, or multi-junctions, such as SiC/Si, GaAs/AlGaAs, and AlGaN/GaN. Heterojunction configurations have attracted significant attention in the field of optoelectronic sensing and energy harvesting due to their enhanced efficiency and sensing functionality compared to homojunctions. Although silicon (Si) has traditionally been the predominant semiconductor material in the electronics industry, it exhibits limitations when operating in harsh environments, including elevated temperatures and chemically corrosive conditions. In contrast, silicon carbide (SiC) demonstrates remarkable reliability in such challenging conditions due to its superior electronic, mechanical, and chemical properties. This study comprehensively investigates the optoelectronic properties of single heterojunction (3C-SiC/Si) and double heterojunctions (p-3C-SiC/p-Si/n-Si) of different semiconductor types under various working conditions, including high temperature and presence of magnetic field. The theories of photogeneration and charge carrier transport in semiconductor heterojunctions were applied to design the double heterojunctions and to analyze the obtained results. The findings reveal that the photoelectric energy conversion and optical position sensitivity of the double junction p-3C-SiC/p-Si/n-Si are remarkably superior, being 20 to 100 times greater than that of its single junction counterpart p-3C-SiC/n-Si. These findings are expected to advance optoelectronic sensing technology toward highly sensitive self-powered sensing and highly-efficient energy harvesting applications.