Raman scattering spectra of 4H-SiC with different carrier concentrations were measured from 90 K to 660 K. By using the improved empirical formula and the energy-time uncertainty relation, temperature and doping dependence of Raman shift and phonon lifetimes were studied. For the folded transverse acoustic (FTA) and longitudinal optical (FLO) mode with E2 symmetry, the doping process induced the decrease of the c- and a-axis lattice constants which led to the changes of the vibrational frequencies and was the dominant contribution to the difference of the first- and second-order temperature coefficients. And the anharmonic decay of the phonons was established as the dominant mechanism affecting the phonon lifetimes of E2(FTO) mode at all temperatures. It is observed the phonon-carrier interaction directly determines the Raman shift and lifetimes of the folded longitudinal optical (FLO) mode with A1 symmetry.