Self-trapped excitonic green emission from layered semiconductors

No Thumbnail Available
File version
Author(s)
Miah, M Idrish
Griffith University Author(s)
Primary Supervisor
Other Supervisors
Editor(s)
Date
2009
Size
File type(s)
Location
License
Abstract

Crystals of layered semiconductor are grown by Bridgman technique and are studied them under twophoton excitation by a Q-switched 20-ns pulse laser. The photoluminescence (PL) emission spectra of the crystals are measured at various pumping powers and temperatures. The PL spectra appear broad and structureless emissions with their peaks in the green spectral region. The characteristic emissions are fromself-trapped excitons of the crystals. An analysis of the spectra measured at various pumping powers shows a quadratic dependence of the PL peak intensity on the power, confirming a biphotonic process of the two-photonpumping. The temperature dependence shows an enhancement of the nonlinear response at low temperatures. The activation energy is estimated and found to be 2.4 meV. The roles of the bound excitons in the observed PL are discussed briefly.

Journal Title

Materials Chemistry and Physics

Conference Title
Book Title
Edition
Volume

116

Issue

2-Mar

Thesis Type
Degree Program
School
Publisher link
Patent number
Funder(s)
Grant identifier(s)
Rights Statement
Rights Statement
Item Access Status
Note
Access the data
Related item(s)
Subject

Macromolecular and materials chemistry

Materials engineering

Nanotechnology

Persistent link to this record
Citation
Collections