Modelling the Growth of Thin Silicon Oxide Films on Silicon

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Dimitrijev, S
Harrison, HB
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1996
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Abstract

This article analyses the validity of the widely used semi‐empirical oxidation models based on the Deal‐Grove formulation in the light of recent advances in the understanding of the oxidation process. An extension of the Deal‐Grove formulation is suggested to account for the newest experimental results. The introduced extension incorporates the effect of accelerated initial growth into the theoretical oxidation growth model. There is a direct relationship between the newly‐derived theoretical term for the initial growth rate and its widely‐used empirical counterpart.

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Journal of Applied Physics

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80

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4

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Mathematical sciences

Physical sciences

Forestry biomass and bioproducts

Engineering

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