Defect analysis of sputter grown cupric oxide for optical and electronics application

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Dalapati, Goutam Kumar
Kajen, Rasanayagam Sivasayan
Masudy-Panah, Saeid
Sonar, Prashant
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2015
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Abstract

We have studied the defect density and defect level of sputter grown cupric oxide (CuO) for optical and electronic applications. A deep level transient spectroscopy (DLTS) technique has been employed to study the defect density in the CuO thin film deposited by sputtering. The DLTS studied showed that the defect density significantly reduced for the film grown at a high working pressure. It has also been shown that doping density increases for the film grown at a high working pressure. Transmission electron microscopy analysis revealed the improvement of the crystal quality of the CuO thin film prepared at the high working pressure. The band gap of sputter grown CuO was found to be ~1.4 eV with an absorption coefficient of ~104 cm−1. From a photoelectron spectroscopy measurement, it was found that the work function for CuO was ~5.2 eV. The present work reveals the importance of CuO for optical and electronic device applications.

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Journal of Physics D: Applied Physics

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48

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49

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© 2015 Institute of Physics Publishing. This is the author-manuscript version of this paper. Reproduced in accordance with the copyright policy of the publisher.Please refer to the journal's website for access to the definitive, published version.

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Physical sciences

Engineering

Science & Technology

Physics, Applied

Physics

cupric oxide

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Dalapati, GK; Kajen, RS; Masudy-Panah, S; Sonar, P, Defect analysis of sputter grown cupric oxide for optical and electronics application, Journal of Physics D: Applied Physics, 2015, 48 (49), pp. 495104:1-495104:6

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