Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal–Oxide–Semiconductor Transistors
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Author(s)
Davidovic, Vojkan
Stojadinovic, Ninoslav
Dankovic, Danijel
Golubovic, Snezana
Manic, Ivica
Djoric-Veljkovic, Snezana
Dimitrijev, Sima
Stojadinovic, Ninoslav
Dankovic, Danijel
Golubovic, Snezana
Manic, Ivica
Djoric-Veljkovic, Snezana
Dimitrijev, Sima
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Akihiro Kono (Editor-in-Chief), Yoshiaki Nakano (Editor-in-Chief)
Date
2008
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Japanese Journal of Applied Physics
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47
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Self-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the author[s] for more information.
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Mathematical sciences
Physical sciences
Engineering