Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC

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Correa, SA
Radtke, C
Soares, GV
Miotti, L
Baumvol, IJR
Dimitrijev, S
Han, J
Hold, L
Kong, F
Stedile, FC
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2009
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Abstract

C-containing interlayers formed between the SiC substrate and dielectric films thermally grown in O2, NO, and in O2 followed by annealing in NO were investigated. X-ray reflectometry and x-ray photoelectron spectroscopy were used to determine N and C incorporation in dielectric films and interlayers, as well to determine their mass densities and thicknesses. The thickest C-containing interlayer was observed for films thermally grown in O2, whereas the thinnest one was observed for films directly grown in NO, evidencing that the presence of N decreases the amount of carbonaceous compounds in the dielectric/SiC interface region.

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Applied Physics Letters

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94

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© 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://dx.doi.org/10.1063/1.3159812

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Physical sciences

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Microelectronics

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