Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods
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Nicholls, Jordan R
Haasmann, Daniel
Dimitrijev, Sima
Sveinbjornsson, Einar O
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Fast near-interface (NI) traps have recently been suggested to be the main cause for poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors. Combining capacitance, conductance, and thermal dielectric relaxation current (TDRC) analysis at low temperatures of nitrided SiC MOS capacitors, we observe two categories of fast and slow near-interface traps at the SiO2/4H-SiC interface. TDRC reveals a suppression of slow near-interface traps after nitridation. Capacitance and conductance analysis reveals a high density of fast NI traps close to the SiC conduction band edge that are enhanced by nitridation. The very fast response of NI traps prevents them from detection using TDRC or deep level transient spectroscopy.
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Journal of Applied Physics
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131
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21
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© 2022 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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Electrical engineering
Nanotechnology
Engineering
Mathematical sciences
Physical sciences
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Physical Sciences
Physics, Applied
Physics
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Vidarsson, AM; Nicholls, JR; Haasmann, D; Dimitrijev, S; Sveinbjornsson, EO, Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods, Journal of Applied Physics, 2022, 131 (21), pp. 215702