Spin relaxation due to polar optical phonon scattering in semiconductors was investigated. The relaxation of the electron spin was found to increase with increasing the strength of the electric field. However, a high field completely depolarized the electron spin due to an increase of the spin precession frequency of the hot electrons, suggesting that high field transport conditions might not be desirable for spin-based technology with these semiconductors. It was also found that spin relaxation decreases with increasing moderately n-doping density or decreasing temperature. The results were discussed in comparison with the data available in the literature.