Electrical characteristics of NO nitrided SiO2 grown on p-type 4H-SiC
File version
Author(s)
Dimitrijev, S
Harrison, HB
Sweatman, D
Tanner, P
Griffith University Author(s)
Primary Supervisor
Other Supervisors
Editor(s)
Stojadinovic N.
Date
Size
206325 bytes
6937 bytes
File type(s)
application/pdf
text/plain
Location
NISH, YUGOSLAVIA
License
Abstract
This paper presents results of the physical characterization of NO nitrided SiC/SiO2 interfaces by XPS analysis. The results show different interface chemistries between NO nitrided and Ar annealed SiC/SiO2 interfaces. After NO nitridation, N builds up at the SiC/SiO2 interface forming Si=N bonds. The NO nitrided SiC/SiO2 interface is free of the complex interface oxide/carbon compounds which are suggested to be the reason for the inferiority of the SiC/SiO2 interface compared to the Si/SiO 2 interface.
Journal Title
Conference Title
1997 21ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS, VOLS 1 AND 2
Book Title
Edition
Volume
2
Issue
Thesis Type
Degree Program
School
Patent number
Funder(s)
Grant identifier(s)
Rights Statement
Rights Statement
© 1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.