Effect of Hole-Injection on Leakage Degradation in ap-GaN Gate AlGaN/GaN Power Transistor

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Tang, Xi
Li, Baikui
Moghadam, Hamid Amini
Tanner, Philip
Han, Jisheng
Dimitrijev, Sima
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2018
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Abstract

The gate structure of a p-(Al)GaN gate AlGaN/GaN high electron mobility transistor (HEMT) is a direct bandgap hetero-PN junction, which emits light under forward bias above the threshold voltage. This internal light emission induces persistent photoconductivity (PPC) of the GaN channel/buffer layer, leading to the increase in OFF-state leakage current. In this letter, we studied the OFF-state leakage degradation induced by ON-state gate drive of a p-GaN gate HEMT. Two self-limiting functions are discovered: 1) saturation of the increment of leakage current under continuous pulse operations and 2) dramatically enhanced recovery speed of the internal light-emissioninduced PPC effect at elevated temperatures. This letter indicates the robustnessof p-(Al)GaN gate HEMTs in switching applications in spite of the seemingly inevitable leakage current degradation.

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IEEE Electron Device Letters

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39

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8

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Electrical engineering

Electronics, sensors and digital hardware

Electronics, sensors and digital hardware not elsewhere classified

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