Solid source growth of graphene with Ni–Cu catalysts: towards high quality in situ graphene on silicon
File version
Author(s)
Boeckl, John
Tadich, Anton
Jones, Robert T
Pigram, Paul J
Edmonds, Mark
Fuhrer, Michael S.
Nichols, Barbara M
Iacopi, Francesca
Griffith University Author(s)
Primary Supervisor
Other Supervisors
Editor(s)
Date
Size
File type(s)
Location
License
Abstract
We obtain a monolayer graphene on epitaxial silicon carbide on silicon substrates via solid source growth mediated by a thin Ni–Cu alloy. Raman spectroscopy consistently shows an I D/I G band ratio as low as ~0.2, indicating that the graphene obtained through this method is to-date the best quality monolayer grown on epitaxial silicon carbide films on silicon. We describe the key steps behind the graphene synthesis on the basis of extensive physical, chemical and morphological analyses. We conclude that (1) the oxidation, amorphisation and silicidation of the silicon carbide surface mediated by the Ni, (2) the liquid-phase epitaxial growth of graphene as well as (3) the self-limiting graphitization provided the molten Cu catalyst, are key characteristics of this novel synthesis method.
Journal Title
Journal of Physics D: Applied Physics
Conference Title
Book Title
Edition
Volume
50
Issue
9
Thesis Type
Degree Program
School
Publisher link
Patent number
Funder(s)
Grant identifier(s)
Rights Statement
Rights Statement
Item Access Status
Note
Access the data
Related item(s)
Subject
Physical sciences
Other physical sciences not elsewhere classified
Engineering