InSe has attracted significant attention because of its extraordinary properties. However, the responsivities of the devices are mainly focused in the visible range. Here, we report an InSe/hexagonal boron nitride (h-BN)-based photodetector with high responsivity and a photoresponse from a 940 to 447 nm wide response range, which is mainly due to two main techniques: (i) h-BN insertion underneath the InSe channel, and (ii) tetrafluorotetracyanoquinodimethane p-doping treatment. The method described here presents a significant step toward the achievement of next-generation high-performance photodetectors based on two-dimensional nanomaterials.