A Figure of Merit for Selection of the Best Family of SiC Power MOSFETs
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Dimitrijev, Sima
Haasmann, Daniel
Moghadam, Hamid Amini
Pande, Peyush
Jadli, Utkarsh
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Abstract
This paper proposes a criterion to select the best family of commercial SiC power metal– oxide–semiconductor field-effect transistors (MOSFETs) that provides the highest quality and reliability. Applying a recently published integrated-charge method, a newly proposed figure of merit is correlated to the density of near-interface traps that degrade the quality and reliability of SiC MOSFETs. The applicability of the proposed figure of merit is experimentally demonstrated with the most widely used and commercially available planar and trench MOSFETs from different manufacturers.
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Electronics
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11
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9
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© 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
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Nanotechnology
Power electronics
Compound semiconductors
Industrial electronics
Microelectronics
Engineering
Electrical engineering
Nanoscale characterisation
Electronics, sensors and digital hardware
Science & Technology
Technology
Physical Sciences
Computer Science, Information Systems
Engineering, Electrical & Electronic
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Chaturvedi, M; Dimitrijev, S; Haasmann, D; Moghadam, HA; Pande, P; Jadli, U, A Figure of Merit for Selection of the Best Family of SiC Power MOSFETs, Electronics, 2022, 11 (9), pp. 1433