A double layer DBD plasma jet driven by a pulsed generator is used for SiO x thin film deposition. The effects of dielectric and conductive targets on discharge behavior and film properties are analyzed. Different fraction of N2 is added to the working gas (argon) to modulate film growth rate. The electrical property and optical emission of the plasma jet at different positions are characterized. Film surface morphology, composition and thickness are measured for different targets. The excitation temperature (T exc ), vibrational temperature (T vib ) and rotational temperature (T rot ) are calculated. The relationship between the discharge behavior and the film properties is studied. Results show that the relative optical emission intensities of Si, O, Ar and N2, as well as T exc , T vib and T rot are higher for the PMMA target between the high voltage electrode and the grounded electrode (referred to as the H–G region). However, T vib and T rot appear to be higher on the surface of the copper (conductive) target. The morphology of SiO x film is different: nanoparticles are formed on the PMMA (dielectric) target while dense amorphous film is formed on the copper target. With the same depositing parameters, the thickness of the SiO x film is higher on the copper target. The presence of PMMA at the downstream of the plasma can be considered as a small capacitor with a large resistance, which inhibits the current into the primary circuit passing through the H–G region. Although the presence of a dielectric target enhances the discharge in the H–G region, the charge accumulation on the PMMA surface limits the film growth. These results may contribute to the development of next-generation plasma surface modification technologies for diverse applications in electronics, material synthesis and other related areas.