RF Sputtering of ZnO (002) Thin Films on Top of 3C-SiC-on-Si (100) Substrates for Low Cost Piezoelectric Devices
File version
Version of Record (VoR)
Author(s)
Iqbal, A
Chaik, K
Tanner, P
Iacopi, A
Mohd-Yasin, F
Griffith University Author(s)
Primary Supervisor
Other Supervisors
Editor(s)
Barsony, I
Zolnai, Z
Battistig, G
Date
Size
File type(s)
Location
Budapest, HUNGARY
Abstract
In this paper, we deposited c-axis oriented ZnO thin films on top of epitaxial 3C-SiC/Si (100) substrates using RF magnetron sputtering. We investigated the effect of O2/Ar ratio and the post-annealing temperature. The grazing angle incident x-ray diffraction results show that ZnO thin-films are highly oriented along the (002) crystalline direction between the O2/Ar ratio of 30% to 50%, at the post-annealing temperature of 600 ˚C in nitrogen environment. The recipe from this work can be used to develop low cost piezoelectric devices such as an energy harvester.
Journal Title
Conference Title
PROCEEDINGS OF THE 30TH ANNIVERSARY EUROSENSORS CONFERENCE - EUROSENSORS 2016
Book Title
Edition
Volume
168
Issue
Thesis Type
Degree Program
School
Publisher link
Patent number
Funder(s)
Grant identifier(s)
Rights Statement
Rights Statement
© 2016 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/) which permits unrestricted, non-commercial use, distribution and reproduction in any medium, providing that the work is properly cited.
Item Access Status
Note
Access the data
Related item(s)
Subject
Engineering
Nanotechnology not elsewhere classified